wb_cond_exp¶

Name: wb_cond_exp - Wang buzsaki model

Description:

wb_cond_exp is an implementation of a modified Hodkin-Huxley model (1) Post-synaptic currents

Incoming spike events induce a post-synaptic change of conductance modeled by an exponential function.

Spike Detection

Spike detection is done by a combined threshold-and-local-maximum search: if there is a local maximum above a certain threshold of the membrane potential, it is considered a spike.

References:

Wang, X.J. and Buzsaki, G., (1996) Gamma oscillation by synaptic inhibition in a hippocampal interneuronal network model. Journal of neuroscience, 16(20), pp.6402-6413.

SeeAlso: hh_cond_exp_traub

Parameters¶

Name	Physical unit	Default value	Description
t_ref	ms	2.0ms	Refractory period
g_Na	nS	3500.0nS	Sodium peak conductance
g_K	nS	900.0nS	Potassium peak conductance
g_L	nS	10nS	Leak conductance
C_m	pF	100.0pF	Membrane Capacitance
E_Na	mV	55.0mV	Sodium reversal potential
E_K	mV	-90.0mV	Potassium reversal potentia
E_L	mV	-65.0mV	Leak reversal Potential (aka resting potential)
V_Tr	mV	-55.0mV	Spike Threshold
tau_syn_ex	ms	0.2ms	Rise time of the excitatory synaptic alpha function i
tau_syn_in	ms	10.0ms	Rise time of the inhibitory synaptic alpha function
E_ex	mV	0.0mV	Excitatory synaptic reversal potential
E_in	mV	-75.0mV	Inhibitory synaptic reversal potential
I_e	pA	0pA	constant external input current

State variables¶

Name	Physical unit	Default value	Description
V_m	mV	-65.0mV	Membrane potential
alpha_n_init	1 / ms	-0.05 / (ms * mV) * (V_m + 34.0mV) / (exp(-0.1 * (V_m + 34.0mV)) - 1.0)
beta_n_init	1 / ms	0.625 / ms * exp(-(V_m + 44.0mV) / 80.0mV)
alpha_m_init	1 / ms	0.1 / (ms * mV) * (V_m + 35.0mV) / (1.0 - exp(-0.1mV * (V_m + 35.0mV)))
beta_m_init	1 / ms	4.0 / (ms) * exp(-(V_m + 60.0mV) / 18.0mV)
alpha_h_init	1 / ms	0.35 / ms * exp(-(V_m + 58.0mV) / 20.0mV)
beta_h_init	1 / ms	5.0 / (exp(-0.1 / mV * (V_m + 28.0mV)) + 1.0) / ms
Inact_h	real	alpha_h_init / (alpha_h_init + beta_h_init)	Act_m real = alpha_m_init / ( alpha_m_init + beta_m_init )
Act_n	real	alpha_n_init / (alpha_n_init + beta_n_init)

Equations¶

\[\frac{ dV_{m} } { dt }= \frac 1 { C_{m} } \left( { (-(I_{Na} + I_{K} + I_{L}) + I_{e} + I_{stim} + I_{syn,inh} + I_{syn,exc}) } \right)\]

\[\frac{ dAct_{n} } { dt }= (\alpha_{n} \cdot (1 - Act_{n}) - \beta_{n} \cdot Act_{n})\]

\[\frac{ dInact_{h} } { dt }= (\alpha_{h} \cdot (1 - Inact_{h}) - \beta_{h} \cdot Inact_{h})\]

Source code¶neuron wb_cond_exp:
  state:
    r integer = 0 # number of steps in the current refractory phase

    V_m mV = E_L    # Membrane potential

    Inact_h real = alpha_h_init / ( alpha_h_init + beta_h_init )
    Act_n real = alpha_n_init / ( alpha_n_init + beta_n_init )
  end

  equations:
    # synapses: exponential conductance
    kernel g_in = exp(-1.0 / tau_syn_in * t)
    kernel g_ex = exp(-1.0 / tau_syn_ex * t)

    recordable inline I_syn_exc pA = convolve(g_ex, spikeExc) * ( V_m - E_ex )
    recordable inline I_syn_inh pA = convolve(g_in, spikeInh) * ( V_m - E_in )

    inline I_Na  pA = g_Na * _subexpr(V_m) * Inact_h * ( V_m - E_Na )
    inline I_K   pA  = g_K * Act_n**4 * ( V_m - E_K )
    inline I_L   pA = g_L * ( V_m - E_L )

    V_m' =( -( I_Na + I_K + I_L ) + I_e + I_stim + I_syn_inh + I_syn_exc ) / C_m
    Act_n' = ( alpha_n(V_m) * ( 1 - Act_n ) - beta_n(V_m) * Act_n )  # n-variable
    Inact_h' = ( alpha_h(V_m) * ( 1 - Inact_h ) - beta_h(V_m) * Inact_h ) # h-variable
  end

  parameters:
    t_ref ms = 2.0 ms           # Refractory period
    g_Na nS = 3500.0 nS         # Sodium peak conductance
    g_K nS = 900.0 nS           # Potassium peak conductance
    g_L nS = 10 nS              # Leak conductance
    C_m pF = 100.0 pF           # Membrane Capacitance
    E_Na mV = 55.0 mV           # Sodium reversal potential
    E_K mV = -90.0 mV           # Potassium reversal potentia
    E_L mV = -65.0 mV           # Leak reversal Potential (aka resting potential)
    V_Tr mV = -55.0 mV          # Spike Threshold
    tau_syn_ex ms = 0.2 ms      # Rise time of the excitatory synaptic alpha function i
    tau_syn_in ms = 10.0 ms     # Rise time of the inhibitory synaptic alpha function
    E_ex mV = 0.0 mV            # Excitatory synaptic reversal potential
    E_in mV = -75.0 mV          # Inhibitory synaptic reversal potential

    # constant external input current
    I_e pA = 0 pA
  end

  internals:
    RefractoryCounts integer = steps(t_ref) # refractory time in steps

    alpha_n_init 1/ms = -0.05/(ms*mV) * (E_L + 34.0 mV) / (exp(-0.1 * (E_L + 34.0 mV)) - 1.0)
    beta_n_init  1/ms = 0.625/ms * exp(-(E_L + 44.0 mV) / 80.0 mV)
    alpha_h_init 1/ms = 0.35/ms * exp(-(E_L + 58.0 mV) / 20.0 mV)
    beta_h_init  1/ms = 5.0 / (exp(-0.1 / mV * (E_L + 28.0 mV)) + 1.0) /ms
  end

  input:
    spikeInh nS <- inhibitory spike
    spikeExc nS <- excitatory spike
    I_stim pA <- continuous
  end

  output: spike

  update:
    U_old mV = V_m
    integrate_odes()
    # sending spikes: crossing 0 mV, pseudo-refractoriness and local maximum...
    if r > 0: # is refractory?
      r -= 1
    elif V_m > V_Tr and U_old > V_m: # threshold && maximum
      r = RefractoryCounts
      emit_spike()
    end
  end

  function _subexpr(V_m mV) real:
    return alpha_m(V_m)**3 / ( alpha_m(V_m) + beta_m(V_m) )**3
  end

  function alpha_m(V_m mV) 1/ms:
    return 0.1/(ms*mV) * (V_m + 35.0 mV) / (1.0 - exp(-0.1 mV * (V_m + 35.0 mV)))
  end

  function beta_m(V_m mV) 1/ms:
    return 4.0/(ms) * exp(-(V_m + 60.0 mV) / 18.0 mV)
  end

  function alpha_n(V_m mV) 1/ms:
    return -0.05/(ms*mV) * (V_m + 34.0 mV) / (exp(-0.1 * (V_m + 34.0 mV)) - 1.0)
  end

  function beta_n(V_m mV) 1/ms:
    return 0.625/ms * exp(-(V_m + 44.0 mV) / 80.0 mV)
  end

  function alpha_h(V_m mV) 1/ms:
    return 0.35/ms * exp(-(V_m + 58.0 mV) / 20.0 mV)
  end

  function beta_h(V_m mV) 1/ms:
    return 5.0 / (exp(-0.1 / mV * (V_m + 28.0 mV)) + 1.0) /ms
  end

end

wb_cond_exp¶

Parameters¶

State variables¶

Equations¶

Source code¶

Characterisation¶